全部
(>90% nanotubes)
(6,5) chirality, carbon >= 95%, ≥93% (carbon as SWNT), 0.7-0.9?nm diameter (by f
(6,5) chirality, carbon >90?%, ≥77% (carbon as SWNT), 0.7-0.9?nm diameter (by fl
(7,6) chirality, carbon >90?%, ≥77% (carbon as SWNT), 0.7-1.1?nm diameter
<1% Metal Catalyst
<10% Metal Oxide (TGA)
<3.5% Metal Catalyst
>60% SWNT
>70% (TGA)
>80% carbon basis, D × L 4-5?nm × 0.5-0.6?μm , bundle dimensions
>90% carbon basis, D × L 110-170?nm × 5-9?μm
>90% carbon basis, D × L 4-5?nm × 0.5-1.5?μm , bundle dimensions
>90% carbon basis, D × L 4-6?nm × 0.7-1.0?μm , bundle dimensions
>95% (carbon as SWCNT)
>98% carbon basis, O.D. × L 6-13?nm × 2.5-20?μm
≥98% carbon basis, O.D. × I.D. × L 10?nm ± 1 nm × 4.5?nm ± 0.5?nm × 3-~6?μm, TEM
50 - 80%
50-80% carbon basis, O.D. × I.D. × L 5?nm × 1.3-2.0?nm × 50?μm
60%
70%
75-85% carbon basis, D × L 1.1?nm × 0.5-1.0?μm , bundle dimensions
80-90% carbon basis, D × L 2-10?nm × 0.5-2?μm , bundle dimensions
90%
95%
98%
98% (Metallic)
98% (Semiconducting)
99.9%
99%
as-produced cathode deposit, >7.5% MWCNT basis, O.D. × L 7-15?nm × 0.5-10?μm
carbon >90?%, ≥80.0% (carbon as SWNT), 0.7-1.4?nm diameter
N/A
O.D. × L 6-9?nm × 5?μm, >95% (carbon)
powdered cylinder cores, 20-30% MWCNT basis, O.D. × L 7-12?nm × 0.5-10?μm
short, ≤10% Metal Oxide (TGA)
thin and short, <5% Metal Oxide (TGA)
thin, <5% Metal Oxide(TGA)
vertically aligned on copper wafer substrate
vertically aligned on silicon wafer substrate