数字中国建设加速,高性能电子材料助力半导体自主创新

时间: 2025-07-16
作者: 百灵威
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数字中国建设加速,高性能电子材料助力半导体自主创新-百灵威

随着国家数据局加快推进数字中国建设,2024年数字经济核心产业占GDP比重已达10%,集成电路、人工智能等关键技术成为发展核心。百灵威(JK Chemical)聚焦芯片制造CVD材料与石墨烯晶圆,为数字产业提供高性能电子材料解决方案,助力中国半导体自主创新!

数字中国建设催生芯片材料新需求

AI算力爆发:大模型训练依赖先进制程芯片,推动CVD高纯材料需求

5G/6G通信:GaN/SiC功率器件需求激增,外延生长工艺是关键

国产替代加速:石墨烯晶圆为后摩尔时代提供新路径

产品列表
品名 CAS 货号
Single layer single crystal graphene wafer, substrate sapphire, roughness: <1 nm, 6 inches, Six inches
单层单晶石墨烯晶圆,衬底为蓝宝石,粗糙度:<1 nm,6英寸
/ 9426670
High quality graphene wafer without transfer, substrate is sapphire, 1 layer (single-layer rate of more than 90%), light transmittance of 85.7%, 6 inches, Six inches
无转移高品质石墨烯晶圆,衬底为蓝宝石,1层(单层率90%以上),透光率85.7%,6英寸
/ 9426701
Non-transfer graphene wafer, substrate sapphire, 5-7 layers, 4 inches, 1 EA=10 pcs, Four inches, 1 EA=10 pcs
无转移石墨烯晶圆,衬底为蓝宝石,5-7层,4英寸,1 EA=10 pcs
/ 9426703
Non-transfer graphene wafer, substrate SiO2/Si, surface resistance below 3000,2 inches, 1 EA=10 pcs, Two inches, 1 EA=10 pcs
无转移石墨烯晶圆,衬底为SiO2/Si,面电阻低于3000,2英寸,1 EA=10 pcs
/ 9426706
Non-transferable graphene wafer, quartz substrate, surface resistance below 3000, 6 inches, 1 EA=3 pcs, Six inches, 1 EA=3 pcs
无转移石墨烯晶圆,衬底为石英,面电阻低于3000,6英寸,1 EA=3 pcs
/ 9426713
Single layer single crystal graphene film, single crystal copper foil epitaxial single crystal graphene, 5cm×5cm, 5cm×5cm
单层单晶石墨烯薄膜,单晶铜箔外延单晶石墨烯,5cm×5cm
/ 9426675
Single layer polycrystalline graphite film, substrate is copper foil, copper single crystal domain size Cuds: Cuds < 9 cm2, 21cm×29.7cm, 21cm×29.7cm
单层多晶石墨烯薄膜,衬底为铜箔,铜单晶畴区尺寸 Cuds:Cuds < 9 cm2,21cm×29.7cm
/ 9426682
Graphene transfer film, single layer single crystal graphene film transferred to silicon substrate, 2cm×2cm, 2cm×2cm
石墨烯转移膜,单层单晶石墨烯薄膜转移到硅衬底,2cm×2cm
/ 9426684
Graphene transfer film, single layer single crystal graphene film transferred to silicon substrate, 10cm×10cm, 10cm×10cm
石墨烯转移膜,单层单晶石墨烯薄膜转移到硅衬底,10cm×10cm
/ 9426689
Wafer-scale graphene transfer film, graphene wafer-scale film transfer to silicon substrate, Four inches, Four inches
晶圆级石墨烯转移膜,石墨烯晶圆级薄膜转移到硅衬底,Four inches
/ 9426698
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